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PZT751T1G PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features http://onsemi.com High Current: 2.0 A The SOT--223 Package can be soldered using wave or reflow. SOT--223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die NPN Complement is PZT651T1 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Collector--Emitter Voltage Collector--Base Voltage Emitter--Base Voltage Collector Current Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Value 60 80 5.0 2.0 0.8 6.4 -- 65 to 150 150 Unit Vdc Vdc Vdc Adc W mW/C C C SOT-223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT COLLECTOR 2, 4 BASE 1 EMITTER 3 MARKING DIAGRAM AYW ZT751G G 1 SOT-223 CASE 318E STYLE 1 Tstg TJ THERMAL CHARACTERISTICS Rating Thermal Resistance from Junction--to-Ambient in Free Air Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RJA TL Value 156 260 10 Unit C/W C Sec A = Assembly Location Y = Year W = Work Week G = Pb--Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device PZT751T1G Package SOT--223 (Pb--Free) Shipping 1000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR--4 glass epoxy printed circuit board using minimum recommended footprint. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2010 October, 2010 - Rev. 6 - 1 Publication Order Number: PZT751T1/D PZT751T1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector--Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector--Emitter Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter--Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base--Emitter Cutoff Current (VEB = 4.0 Vdc) Collector--Base Cutoff Current (VCB = 80 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO IEBO ICBO 60 80 5.0 -----0.1 100 Vdc Vdc Vdc mAdc nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 50 mAdc, VCE = 2.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) Collector--Emitter Saturation Voltages (IC = 2.0 Adc, IB = 200 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) Base--Emitter Voltages (IC = 1.0 Adc, VCE = 2.0 Vdc) Base--Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) Current--Gain--Bandwidth (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. hFE 75 75 75 40 ----75 ----0.5 0.3 1.0 1.2 --- VCE(sat) Vdc VBE(on) VBE(sat) fT Vdc Vdc MHz http://onsemi.com 2 PZT751T1G 300 270 240 hFE , DC CURRENT GAIN 210 180 150 120 90 60 30 0 10 20 50 100 200 500 1.0 A 2.0 A 4.0 A IC, COLLECTOR CURRENT (mA) 25C TJ = 125C NPN VCE = 2.0 V hFE , DC CURRENT GAIN 250 225 200 175 150 125 100 75 50 25 PNP TJ = 125C VCE = --2.0 V 25C -- 55C -- 55C 0 --10 -- 20 -- 50 --100 -- 200 -- 500 --1.0 A --2.0 A --4.0 A IC, COLLECTOR CURRENT (mA) Figure 1. Typical DC Current Gain Figure 2. Typical DC Current Gain 2.0 1.8 1.6 V, VOLTAGE (VOLTS) 1.2 1.0 0.8 0.6 0.4 0.2 0 50 100 1.4 NPN --2.0 --1.8 --1.6 V, VOLTAGE (VOLTS) --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 2.0 A 4.0 A 0 --50 --100 PNP VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 200 500 1.0 A IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 --200 --500 --1.0 A IC, COLLECTOR CURRENT (mA) --2.0 A --4.0 A Figure 3. On Voltages VCE , COLLECTOR--EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR--EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) 50 100 200 500 IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A TJ = 25C Figure 4. On Voltages --1.0 --0.9 --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 IC = --10 mA IC = --500 mA IC = --100 mA --50 --100 --200 --500 IC = --2.0 A TJ = 25C NPN PNP 0 --0.05 --0.1 --0.2 --0.5 --1.0 --2.0 --5.0 --10 --20 IB, BASE CURRENT (mA) Figure 5. Collector Saturation Region Figure 6. Collector Saturation Region http://onsemi.com 3 PZT751T1G PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E--04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM A 1.50 1.63 1.75 0.060 0.064 A1 0.02 0.06 0.10 0.001 0.002 b 0.60 0.75 0.89 0.024 0.030 b1 2.90 3.06 3.20 0.115 0.121 c 0.24 0.29 0.35 0.009 0.012 D 6.30 6.50 6.70 0.249 0.256 E 3.30 3.50 3.70 0.130 0.138 e 2.20 2.30 2.40 0.087 0.091 e1 0.85 0.94 1.05 0.033 0.037 L 0.20 ----------0.008 -----L1 1.50 1.75 2.00 0.060 0.069 HE 6.70 7.00 7.30 0.264 0.276 0 10 0 -- STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR D b1 4 HE 1 2 3 E e1 b e A L L1 C MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 -----0.078 0.287 10 0.08 (0003) A1 SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303--675--2175 or 800--344--3860 Toll Free USA/Canada Fax: 303--675--2176 or 800--344--3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800--282--9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81--3--5773--3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 4 PZT751T1/D |
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